| 二氧化硅基质包埋硅纳米晶的微观结构和发光性能 |
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| 引用本文： | 王乙潜,梁文双,G.G.ROSS.二氧化硅基质包埋硅纳米晶的微观结构和发光性能[J].材料研究学报,2009,23(4). |
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| 作者姓名： | 王乙潜 梁文双 G.G.ROSS |
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| 作者单位： | 1. 青岛大学国家重点实验室培育基地,青岛市宁夏路,308号,青岛,266071
2. INRS-EMT,1650 boulevard Lionel-Boulet,Varennes,Cannada J3X 1S2 |
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| 基金项目： | 青岛大学引进人才科研启动基金 06300701 和加拿大国家自然科学基金 STPGP307205-04 资助项目 |
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| 摘 要： | 利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(Si02)基质中的硅纳米晶,研究了不同离子注入浓度试样的微观结构和发光性能,以及硅纳米晶的生长机理和发光机制.结果表明:较小的硅纳米晶(<5 nm)其生长机理符合Ostwald熟化机理,较大的纳米晶(>10 nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的;离子注入浓度为8×1016cm-2的样品其发光强度是离子注入浓度为3×1017cm-2样品发光强度的5倍;硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.
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| 关 键 词： | 无机非金属材料 硅纳米晶 电子显微学 生长机理 荧光光谱 |
Microstructure and optical properties of Si nanocrystals embedded in SiO_2 film |
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| WANG Yiqian,LIANG Wenshuang,G.G.ROSS.Microstructure and optical properties of Si nanocrystals embedded in SiO_2 film[J].Chinese Journal of Materials Research,2009,23(4). |
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| Authors: | WANG Yiqian LIANG Wenshuang GGROSS |
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| Affiliation: | WANG Yiqian~(1**) LIANG Wenshuang~1 ROSS Guy~2 1.The Cultivation Base for State Key Laboratory,Qingdao University,No.308,Ningxia Road,Qingdao,266071 2.INRS-EMT.1650 boulevard Lionel-Boulet,Varennes,Canada,J3X 1S2 |
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| Abstract: | Si nanocrystals have been fabricated in SiO_2 film using ion implantation followed by high-temperature annealing.The microstructure and optical properties of the samples with different Si~+ implantation doses were investigated,and the growth mechanism and light emission mechanism were explored.The experimental results indicated that for small Si nanocrystals(<5 nm),the growth mechanism conforms to Ostwald ripening;while for the big ones(>10 nm),the coalescence of small nanoparticles through twinning is domi... |
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| Keywords: | inorganic non-metallic materials Si nanocrystals transmission electron microscopy growth mechanism photoluminescence |
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