超级结电场分布仿真分析

为详细研究超级结体内独特的二维电场分布，通过Silvaco软件建立半导体超级结器件基本结构（超级结Pi N），展开直观的定量仿真分析。在仿真中对漏极施加正向电压，得到电场分布图和包括电场峰值、谷值在内的多个特征点。通过连接特征点得到四类特征电场线，沿着各个特征电场线观察其电场变化，验证纵向电荷场对横向电荷场的调制作用。对传统超级结模型进行优化，添加N-缓冲层仿真出半超结P（或N）漂移区中心电场分布，并与传统结构进行对比。

Simulation Analysis of Electric Field Distribution of Super Junction

In order to study the unique two-dimensional electric field distribution in super junction in detail, the basic structure of semiconductor super junction device(super junction PiN) is established by Silvaco software, and intuitive quantitative simulation analysis is carried out. In the simulation, direct voltage is applied to the drain, and the electric field distribution diagram and several characteristic points including the peak and valley of the electric field are obtained. Four kinds of characteristic electric field lines are obtained by connecting characteristic points, and the electric field changes are observed along each characteristic electric field line to verify the modulation effect of longitudinal electric field on transverse electric field. The traditional super junction model is optimized, and N-buffer layer is added to simulate the electric field distribution in the center of the P(or N) drift region of the semi-super junction,which is compared with the traditional structure.