Low-power digitally-controlled variable gain attenuator and LNA with high gain dynamic range for sub-GHz ISM bands |
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Authors: | Mathieu Périn Sébastien Darfeuille Olivier Aymard Patrice Gamand Corinne Berland |
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Affiliation: | 1. Innovation Center Radio Frequency, NXP Semiconductors, 14906, Caen, France 2. LaMIPS, NXP-CRISMAT, Caen, France 3. D??partement Syst??mes Electroniques, ESIEE Paris, 93162, Noisy-le-Grand, France
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Abstract: | A low-power Digitally-controlled Variable Gain Attenuator and Low Noise Amplifier are implemented in a 40-GHz fT 0.25-??m BiCMOS process. They cover the sub-GHz ISM bands for automotive applications such as Remote Keyless Entry. The LNA achieves wideband input matching independent of the variable gain, as well as high reverse isolation, thanks to a partial feedback technique. Its variable gain is based on a resistor-chain gain-control technique, leading to fine gain steps and constant output impedance. This LNA is designed with 15 gain steps of 1?dB. The simulated results for the maximum gain show a Transducer Power Gain of 16.5?dB, a Noise Figure of 2.4?dB and respective input and output IP3 of ?12.1 and +4.5?dBm, while only drawing 1.45?mA from a 2.7?V power supply. The measurement results are slightly degraded because of wire-bonding couplings in the package. This LNA is preceded by a five coarse steps (about 11?dB each) digitally-programmable attenuator based on a hybrid T and R-2R network. Together with the LNA, more than 50?dB of gain dynamic range is achieved. For high attenuation steps, input IP3 of more than +18?dBm is reached. |
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