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| Strain relaxation mechanisms in Si1?xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature | |
| 摘 要： | |
| 收稿时间： | 2 June 1998 |
| 修稿时间： | 5 October 1998 |
| 本文献已被 SpringerLink 等数据库收录！ | |
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