A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors |
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| Authors: | Chandrasekhar S Lunardi LM Gnauck AH Ritter D Hamm RA Panish MB Qua GJ |
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| Affiliation: | AT&T Bell Lab., Crawford Hill Lab., Holmdel, NJ, USA; |
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| Abstract: | Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<> |
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