Effect of annealing on photoluminescence of passivated porous silicon |
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| Affiliation: | 1. Department of Electronic Information Materials, Shanghai University, Yanchang Lu 149, Shanghai 200072, China;2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China;1. State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, PR China;2. Smart Materials and Surfaces Lab, Mechanical Engineering, Faculty of Engineering and Environment, Northumbria University, Newcastle Upon Tyne NE1 8ST, UK;1. College of Science, China University of Petroleum (East China), Qingdao 266580, PR China;2. State Key Laboratory of Heavy Oil Processing, China University of Petroleum (East China), Qingdao 266580, PR China |
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| Abstract: | Photoluminescence (PL) of annealed porous silicon (PS) without and with nitrogen passivation has been investigated. The un-nitridated PS emits intense blue and green light, while that with passivation, emits only blue light and its intensity increases obviously. It is found that the PL intensity of the nitrified PS decreases with increasing temperature from 300 °C to 700 °C, but increases drastically after annealing at 800 °C and 900 °C, which might be due to the formation of Si–N bonds that passivates the non-radiative centers (Si dangling bonds) on the surface of PS samples. However, the intensity of the un-nitridated PS decreases continuously with increasing temperature from 300 °C to 900 °C, which might be due to desorption of hydrogen. |
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