Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration |
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| Affiliation: | 1. National Synchrotron Radiation Laboratory, Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230029, PR China;2. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, PR China;3. Center for Micro- and Nanoscale Research and Fabrication, Hefei National Laboratory for Physical Sciences at Microscale University of Science and Technology of China, Hefei, Anhui 230027, PR China;4. Hefei National Laboratory for Physical Sciences at Microscale University of Science and Technology of China, Hefei, Anhui 230027, PR China;1. Mechanical Engineering Department, Amirkabir University of Technology, Tehran, Iran;2. Mechanical Engineering Department, University of Guilan, Rasht 3756, Iran;1. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;2. Science and Technology on Plasma Physics Laboratory, Mianyang 621900, China |
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| Abstract: | A technique of fabricating metallic thin wires by utilizing effective collection of the atoms caused by electromigration, which is a phenomenon of atomic diffusion due to high current density, is presented. Atoms diffused by electron flow can be used for making metallic thin wires. To form metallic thin wire at the intended position, we used passivated Al thin film line that had a slit at the anode end of the line as a test sample. As a result of current applying, the Al thin wire of a high aspect ratio was fabricated. |
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