Epitaxial growth of anatase TiO2 thin films on LaAlO3(100) prepared using pulsed laser deposition |
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| Affiliation: | 1. Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;2. CREST, Japan Science and Technology Agency (JST), Japan;1. Instituto de Energía Solar – Universidad Politécnica de Madrid ETSI Telecomunicación, Ciudad Universitaria sn, 28040 Madrid, Spain;2. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;1. M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Moscow, Russia;2. Yuri Gagarin State Technical University of Saratov, 410054, Saratov, Russia;1. Department of Physics, NTNU Norwegian University of Science and Technology, NO-7491 Trondheim, Norway;2. CNRS, Centre de Recherche Paul Pascal, UPR 8641 115 Avenue Schweitzer, 33600 Pessac, France;3. Surface du Verre et Interfaces, UMR 125 CNRS/Saint-Gobain, F-93303 Aubervilliers, France;1. State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, China;2. College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;3. Institute of Semiconductors, Chinese Academy of Sciences, Bejing 100083, China |
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| Abstract: | Titanium dioxide thin films were grown on a lattice-matched LaAlO3(100) surfaces using pulsed laser deposition (PLD) in oxygen atmosphere. The films were characterized using X-ray diffraction (XRD), reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). The crystal structure of all the films was anatase. Preferred oriented films with a c-axis normal to the substrate surface were obtained. RHEED analysis also revealed that the films had the preferential in-plane orientation, demonstrating that anatase films were epitaxially grown on the substrate. The flatness of the films depended on their growth conditions and thickness. |
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