An improved junction capacitance model for junction field-effect transistors |
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| Affiliation: | 1. Electrical and Computer Engineering Department, University of Central Florida, Orlando, FL 32816, United States;2. SPICE Modeling Lab, Texas Instruments, Dallas, TX, United States;1. Institute of Vibration, Shock and Noise, State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, Shanghai 200240, China;2. Shanghai Institute of Satellite Engineering, Shanghai 200240, China;1. The State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, 210016 Nanjing, Jiangsu Province, PR China;2. Beijing Aeronautical Science and Technology Research Institute of COMAC, 102211 Beijing, PR China;3. Department of Aeronautics and Astronautics, Stanford University, 496 Lomita Mall, Stanford, CA 94305, USA;4. National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering, PLA University of Science and Technology, 210007 Nanjing, Jiangsu Province, PR China;1. Key Laboratory of Aerocraft Tracking, Telemetering & Command and Communication (Ministry of Education), Chongqing University, Chongqing 400044, China;2. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing, China;3. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190 Beijing, China;1. Electron Energy Corporation-Technology Center, 924 Links Avenue, Landisville, PA 17538, USA;2. Dept. of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104, USA |
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| Abstract: | A new junction capacitance model for the four-terminal junction field-effect transistor (JFET) is presented. With a single expression, the model, which is valid for different temperatures and a wide range of bias conditions, describes correctly the JFET junction capacitance behavior and capacitance drop-off phenomenon. The model has been verified using experimental data measured at Texas Instruments. |
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