AgTaO3 and AgNbO3 thin films by pulsed laser deposition |
| |
| Affiliation: | 1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, China;2. School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454003, China;3. Electronic Materials Research Laboratory, Xi’an Jiaotong University, Xi''an, 710049, China;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;2. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China;4. Fujian Key Laboratory of Highly-reliable Capacitors and Ceramic Materials, Quanzhou, 362000 Fujian, People’s Republic of China;1. Chełkowski Institute of Physics, University of Silesia, ul. Uniwersytecka 4, PL 40-007 Katowice, Poland;2. Institute of Materials Science, University of Silesia, ul. 75 Pułku Piechoty 1A, PL 41-500 Chorzów, Poland;3. Institute of Physics, Pedagogical University, ul. Podchorazych 2, PL 30-084 Krakow, Poland;1. Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College Physics Science and Technology, Hebei University, Baoding, 071002, China;2. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China |
| |
| Abstract: | Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
