Deposition of B4C/BCN/c-BN multilayered thin films by r.f. magnetron sputtering |
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| Affiliation: | 1. Departamento de Física, Universidad del Valle, A.A. 25360, Cali, Colombia;2. Laboratorio de Recubrimientos Duros del CDT-ASTIN SENA, Cali, Colombia;3. Institute for Material Science, Darmstadt University of Technology, Germany;4. Max Plank Institute, Department of Material Research, Stuttgart, Germany;1. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Escuela Politécnica de Sevilla, Universidad de Sevilla (EPS-US), C/ Virgen de África 7, 41011 Sevilla, Spain;2. Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Américo Vespucio 49, 41092 Sevilla, Spain;1. Department of Physics and NTIS-European Centre of Excellence, University of West Bohemia, Univerzitni 8, 30614 Plzen, Czech Republic;2. New Technologies Research Centre (NTC), University of West Bohemia, Univerzitni 8, 30614 Plzen, Czech Republic;1. Delft Unviersity of Technology, Faculty of Electrical Engineering, Mathematics and Computer Science, Department of Microelectronics, Delft Institute of Microsystems and Nanoelectronics(Dimes), Feldmannweg 17, 2628 CT Delft, The Netherlands;2. Politecnico di Milano, Faculty of Electrical Engineering, The Departmen of Electronics, Information and Bioengineering, Piazza Leonardo da Vinci 32, 20133 Milan, Italy;1. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Zhangheng Road 239, Pudong District, Shanghai 201204, China;2. Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China |
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| Abstract: | Thin films of cubic boron nitride (c-BN) and B4C/BCN/c-BN multilayers, were deposited by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.99%) h-BN and a (99.5%) B4C targets, in an Ar (90%)/N2 (10%) gas mixture. Films were deposited onto silicon substrates with (100) orientations at 300 °C, with r.f. power density near 7 W/cm2. In order to obtain the highest fraction of the c-BN phase, an r.f. substrate bias voltage between ? 100 and ? 300 V was applied during the initial nucleation process and ? 50 to ? 100 V during the film growth. Additionally, B4C and BCN films were deposited and analyzed individually. For their deposition, we varied the bias voltage of the B4C films between ? 50 and ? 250 V, and for the BCN coatings, the nitrogen gas flow from 3% to 12%. A 300-nm-thick TiN buffer layer was first deposited to improve the adhesion of all samples. X-ray diffraction patterns revealed the presence of c-BN (111) and h-BN phases. FTIR spectroscopy measurements indicate the presence of a peak at 780 cm? 1 referred to as “out-of-plane” h-BN vibration mode; another peak at 1100 cm? 1 corresponds to the c-BN TO mode and the “in-plane” vibration mode of the h-BN at 1400 cm? 1. BN films deposited at 300 °C at a pressure of 4.0 Pa and under ? 150 V of nucleation r.f. bias, applied for 35 min, presented the highest c-BN fraction, near 85%. By using 32 layers, it was possible to deposit a 4.6-μm-thick c-BN film with adequate mechanical properties and good adhesion to the substrate. |
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