Analysis of three-dimensional proximity effect in electron-beam lithography |
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| Affiliation: | 1. Mechanical Engineering Department, King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia;2. Center of Excellence for Renewable Energy, RI, King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia;3. Optical Sensors Laboratory, National Centre for Sensor Research, Dublin City University, Dublin 9, Ireland;4. Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia;1. College of Physics and Electronic Engineering, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007, China;2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;3. Department of Nuclear Materials Science and Engineering, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China |
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| Abstract: | In most of the proximity effect correction schemes, a two-dimensional model of proximity effect is employed by ignoring or averaging the variation of exposure along the depth dimension in the resist. However, as the feature size continues to decrease, the relative variation becomes significant so that it may need to be taken into account in proximity effect correction. In this study, the three-dimensional (3-D) proximity effect is analyzed in detail through computer simulation as a first step toward developing a 3-D proximity effect correction scheme. Effects of the parameters such as beam energy, resist thickness, feature size, developing threshold, etc., on the 3-D spatial distribution of exposure in the resist, in particular, depth-dependent proximity effect, are considered in the analysis. Results from the extensive simulation are presented in this paper. |
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