Effect of inter-level dielectrics on electromigration in damascene copper interconnect |
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| Affiliation: | 1. Institute of Applied Physics of RAS, Nizhny Novgorod, Russia;2. Lobachevsky State University of Nizhny Novgorod, Russia;3. Institute of Chemistry of High-Purity Substances of RAS, Nizhny Novgorod, Russia;4. Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia;5. LPICM, CNRS Ecole Polytechnique, 91128 Palaiseau, France;1. Department of Electronic Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea;2. Department of Biochemistry and Molecular Biology, Kyung-Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Republic of Korea |
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| Abstract: | The impact of dielectric materials on the reliability of advanced copper (Cu) interconnect is of growing importance. The effect of barrier dielectrics and low-k materials of Inter-Level Dielectric (ILD) on the electromigration (EM) in the line and via-line structure of dual-damascene Cu interconnects was analyzed. The resulting electromigration behavior can then be attributed to Cu barrier layer or low-k dielectrics, depending on the test structure. The SiN barrier layer showed a better electromigration endurance compared to SiC barrier layer for narrow Cu line structure. We had also observed that the carbon-doped oxide (CDO) low-k samples had a higher drift velocity, which results in less electromigration endurance on the via-line structure compared to fluorosilicate glass (FSG). |
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