Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs |
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| Affiliation: | 1. Institut Charles Gerhardt, UMR 5253, Aggregates, Interfaces and Materials for Energy, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France;2. Department of Materials Science and Engineering, Norwegian University of Science and Technology, 7491 Trondheim, Norway;3. Solvay Speciality Polymers Italy S.p.A., Viale Lombardia 20, 20021 Bollate, Milan, Italy;1. School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom;2. South African Institute for Advanced Materials Chemistry, Faculty of Science, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa;1. Kazan Zavoisky Physical-Technical Institute, 420029 Kazan, Russian Federation;2. Kazan (Volga Region) Federal University, 420008 Kazan, Russian Federation;3. South Westphalia University of Applied Sciences, Department of Electrical Engineering, 59494 Soest, Germany;4. University of Paderborn, Department of Physics, 33098 Paderborn, Germany |
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| Abstract: | Iridium-containing and Ni(4 nm)/Au(6 nm) films were evaporated separately on the n+-InGaN–GaN short-period-superlattice (SPS) structure of light-emitting diodes (LEDs). The collective deposition of iridium and other metals as an ohmic contact induces the formation of highly transparent IrO2, which helps to enhance the light output and decrease the series resistance of LEDs. By comparing different metal films used as current spreading contact layer, Ir/Ni film annealed at 500 °C for 20 min in O2 ambient renders devices with lowest turn-on voltage at 20 mA and highest luminous intensity. Moreover, we also analyzed films using atomic force microscopy (AFM) with an emphasis on studying how the surface quality of Ir/Ni and Ni/Au films influences the current spreading and luminosity of LEDs. |
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