Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction |
| |
| Affiliation: | 1. Department of Microelectronics, Fudan University, Handan Road 220, Shanghai 200433, China;2. Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore;1. College of Environment and Chemical Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China;2. College of Material Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China;3. State Key Laboratory of Hollow-Fiber Membrane Materials and Membrane Processes, Tianjin 300387, PR China;1. College of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China;2. Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University, Nanchang, 330031, China;3. Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), 2 Zhongguancun Beiyi Street, Beijing, 100190, China;4. Heeger Beijing Research and Development Center, School of Chemistry and Environment, Beihang University, Beijing, 100191, China;1. School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea;2. ICT Convergence Technology for Health & Safety and the Department of Electronics and Information Engineering, Korea University, 2511 Sejong, Republic of Korea;3. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea;1. Department of Metallurgy and Materials Engineering, CEET, University of the Punjab, 54590, Lahore, Pakistan;2. Mechanical Engineering Department, The University of Texas Pan American, Edinburg, TX, 78539, US |
| |
| Abstract: | Due to an extra barrier between source and channel, the drivability of Schottky barrier source/drain MOSFETs (SBMOSFETs) is smaller than that of conventional transistors. To reach the drivability comparable to the conventional MOSFET, the Schottky barrier height (SBH) should be lower than a critical value. It is expected that SBH can be effectively reduced by a bi-axially strain on Si. In this letter, p-channel MOSFETs with PtSi Schottky barrier source/drain, HfAlO gate dielectric, HfN/TaN metal gate and strained-Si channel are demonstrated for the first time using a simplified low temperature process. Devices with the channel length of 4 μm have the drain current of 9.5 μA/μm and the transconductance of 14 μS/μm at Vgs − Vth = Vds = −1 V. Compared to the cubic Si counterpart, the drain current and the transconductance are improved up to 2.7 and 3.1 times respectively. The improvement is believed to arising from the reduced barrier height of the PtSi/strained-Si contact and the enhanced hole mobility in the strained-Si channel. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
