GISAXS study of Si nanocrystals formation in SiO2 thin films |
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Affiliation: | 1. R. Bošković Institute, P.O. Box 180, HR-10000 Zagreb, Croatia;2. Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS), Italy |
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Abstract: | We present a study on amorphous SiO/SiO2 superlattice using grazing incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100 °C for 1 h in vacuum, yielding Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. |
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