| Affiliation: | 1. Semiconductor Technology Laboratory, GE Global Research, Niskayuna, NY 12309, United States;2. Microstructural and Surface Analysis Laboratory, GE Global Research, Niskayuna, NY 12309, United States;3. Lockheed Martin MS2-Radar Systems, Syracuse, NY 13221, United States;1. Key Lab of Wide Band Gap Semiconductor Materials and Devices, Xi''an 710071, China;2. The School of Microelectronics, Xidian University, Xi''an 710071, China;1. Department of Electrical and Electronics Communication Engineering, GITAM School of Technology, GITAM University, Bengaluru, India;2. Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, India;3. Department of Electronics and Communication Engineering, Amal Jyothi College of Engineering, Kerala, India;4. Graduate Degree Program of College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan;5. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan;6. Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan;7. Department of Electrical Engineering, University of Sharjah, Sharjah, United Arab Emirates;1. SR University, Warangal, Telangana, India;2. Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India;3. Sona College of Technology, Salem, Tamilnadu, India |
