Radiation Hardened CMOS/SOS |
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| Authors: | Aubuchon K. G. Harari E. |
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| Affiliation: | Hughes Aircraft Company Newport Beach, California 92663; |
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| Abstract: | This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g. < l?A per mil of channel width) of post-radiation n-channel back leakage were obtained only with wet oxides. Threshold shifts of ?1V for the n-channel devices and ?2V for the p-channel devices were obtained after 106 rads (Si) on the best devices fabricated. |
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