Electrostatic bonding of high-Tcsuperconducting films to any substrate

Complete integration of high-T _c thin-film superconducting technology with other electronic technologies requires hybrid structures with both technologies on the same substrate. This is difficult to do with direct growth of the superconductor on certain substrates (GaAs, InP) because of the high temperatures required for formation of the superconductor. A method is proposed to circumvent this problem by using electrostatic forces and appropriate thin-film materials to bond superconducting films to any substrate at 300°C. The same principle can be applied to the bonding of other devices on other substrates.