Effects of phosphorus doping source temperatures on fabrication and properties of p-type ZnO thin films |
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Authors: | J Jiang JR Wang XQ Gu XH Pan YJ Zeng ZZ Ye |
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Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | Phosphorus-doped p-type ZnO thin films have been deposited by metalorganic chemical vapor deposition using P2O5 as the dopant source. The conductivity types of the as-grown thin films were strongly temperature-dependent. When the substrate temperature maintains at the optimal one of 420 °C, the evaporating temperature of the phosphorus source plays significant roles in controlling the phosphorus content doping into films, then influences the films' performance. Optimizing the growth parameters, the optimal results were obtained with a resistivity of 6.49 Ω cm, a Hall mobility of 0.40 cm2/V s and a hole concentration of 2.42 × 1018 cm− 3. The optical property of the optimal film was characterized by PL measurements, which indicated the film is of high optical quality. |
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Keywords: | 61 72 V 72 80 E 73 61 G 78 66 H |
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