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Workshop on hydrogen effect in InP and related compounds
Authors:Jacques Chevallier  Bernard Clerjaud  Eyrug Davies  Jean-Michel Dumas  Noble Johnson  Ronald C. Newman  Michael Stavola  Pierre Viktorovitch  John Zavada
Affiliation:1. CNRS/LPS, 1, place A. Briand, F-92195, Meudon Principal, France
2. UPMC, Tour 13, 4, place Jussieu, F-75252, Paris, Cedex 05, France
3. USEORD, 223 Old Marylebone Road, NW1 5TH, London, UK
4. CNET, LAB-OCM, B.P. 40, F-22301, Lannion, France
5. Xerox Research Center, 3333 Coyote Hill Road, CA94304, Palo Alto, USA
6. Imperial College of Sciences Technology and Médecine, Prince Consort Road, SW7 2BZ, London, UK
7. Lehigh University, 18015, Bethlehem, PA, USA
8. Ecole Centrale, 36, av. Guy de Collongue, B.P. 163, F-63131, Ecully Cedex, France
9. USARDSG, 223 Old Marglebona Road, NW1 5TH, London, UK
Abstract:One of the primary technological interests in hydrogen in semiconductors concerns the ease with which it is introduced during crystal growth and processing. Hydrogen can move during device operations and hence alter device characteristics. It is thus necessary to understand how hydrogen is introduced in semiconductors and to be able to detect its presence. Thus, in order to give potential answers to these problems, several topics were discussed. They covered all the hydrogenation effects through : device-related applications, hydrogen-surface interaction, acceptors and donor passivation, unintentional hydrogénation, proton implantation and related problems. Finally, unsolved issues are reviewed in a final talk.
Keywords:
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