Influence of chemical additives on the surface reactivity of Si in KOH solution |
| |
| Authors: | Harold G.G. Philipsen John J. Kelly |
| |
| Affiliation: | Debye Institute for Nanomaterials Science, Utrecht University, Postbox 80000, 3508 TA, Utrecht, The Netherlands |
| |
| Abstract: | It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions. |
| |
| Keywords: | Silicon Electrochemistry Passivation Si(1 0 0) Si(1 1 1) Alkaline solution Etching |
| 本文献已被 ScienceDirect 等数据库收录！ |
