首页 | 本学科首页   官方微博 | 高级检索  
     


Textural and capacitive characteristics of MnO2 nanocrystals derived from a novel solid-reaction route
Authors:Anbao Yuan  Xiuling Wang  Yuqin Wang  Jie Hu
Affiliation:Department of Chemistry, College of Sciences, Shanghai University, 99 Shangda Road, Shanghai 200444, PR China
Abstract:Nanostructured manganese dioxide (MnO2) materials were synthesized via a novel room-temperature solid-reaction route starting with Mn(OAc)2·4H2O and (NH4)2C2O4·H2O raw materials. In brief, the various MnO2 materials were obtained by air-calcination (oxidation decomposition) of the MnC2O4 precursor at different temperatures followed by acid-treatment in 2 M H2SO4 solution. The influence of calcination temperature on the structural characteristics and capacitive properties in 1 M LiOH electrolyte of the MnO2 materials were investigated by X-ray diffraction (XRD), infrared spectrum (IR), transmission electron microscope (TEM) and Brunauer-Emmett-Teller (BET) surface area analysis, cyclic voltammetry, ac impedance and galvanostatic charge/discharge electrochemical methods. Experimental results showed that calcination temperature has a significant influence on the textural and capacitive characteristics of the products. The MnO2 material obtained at the calcination temperature of 300 °C followed by acid-treatment belongs to nano-scale column-like (or needle-like) γ,α-type MnO2 mischcrystals. While, the MnO2 materials obtained at the calcination temperatures of 400, 500, and 600 °C followed by acid-treatment, respectively, belong to γ-type MnO2 with the morphology of aggregates of crystallites. The γ,α-MnO2 derived from calcination temperature of 300 °C exhibited a initial specific capacitance lower than that of the γ-MnO2 derived from the elevated temperatures, but presented a better high-rate charge/discharge cyclability.
Keywords:Nanostructured manganese dioxide  Calcination temperature  Textural characteristic  Pseudocapacitive behavior  Lithium hydroxide electrolyte
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号