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| COMPARISON OF CHARACTERIZATION TECHNIQUES IN P-ON-N HgCdTe LWIR PHOTODIODES TECHNOLOGY | |
| 作者姓名： | WENUS Jakub MADEJCZYK Pawel RUTKOWSKI Jaroslaw (Institute of Applied Physics Military University of Technology Kaliskiego Str. Warsaw Polan |
| 作者单位： | Institute of Applied Physics，Military University of Technology，2 Kaliskiego Str.，00 908 Warsaw，Poland |
| 基金项目： | 波兰KBN!(PBZ28.11/P6)资助项目 |
| 摘 要： | IntroductionAt present Hg Cd Te is the most widely used variable-gap semiconductor for infrared( IR) photodetectors.Over the years it has successfully fought off majorchallenges from extrinsic silicon and lead- tin telluridedevices despite that it has more competitors todaythan ever before.These include Schottky barriers onsilicon,Si Ge heterojunctions,Al Ga As multiplequantum wells,Ga In Sb strained layer superlattices,high temperature superconductors and especially twotypes of thermal … |
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