Deep levels in Si-implanted and rapid thermal annealed semi-insulating gaAs |
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Authors: | Ho Sub Lee Hoon Young Cho Eun Kyu Kim Suk-K Min Tae Won Kang Chi Yhou Hong |
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Affiliation: | (1) Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, 130-650 Cheongryang, Seoul, KOREA;(2) Department of Physics, Dongguk University, 100-715, Seoul, KOREA |
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Abstract: | Deep levels have been investigated in Si-implanted and rapid-thermal-annealed semiinsulating GaAs:Cr, which was grown by a
horizontal Bridgman method. Samples were implanted with a Si-dose of (1 - 5) x 1012 ions cm-2 with 100 keV energy, and treated by a two-step rapid thermal annealing process at 900 and 800° C. After these processes,
three electron deep levels at 0.81, 0.53 and 0.62 eV below the conduction band and three hole deep levels at 0.89, 0.64 and
0.42 eV above the valence band were observed. The new deep levels Ec
- 0.53 eV, Ec
- 0.62 eV, andEv + 0.64 eV in fact, dominate the implantation and/or the thermally damaged region, but are not found in the bulk. These results
indicate that high-density deep levels may be induced near or within the implanted region by rapid heating and cooling, and
that these defects may effect carrier activation. |
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Keywords: | DLTS RTA GaAs:Cr Si-implantation |
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