La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics |
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| Authors: | Z.G. Yi Y.X. Li Q.B. Yang Q.R. Yin |
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| Affiliation: | aState Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, PR China |
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| Abstract: | La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La3+ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La3+ content, the site of dopant ion varies, the grain growth of Bi5TiNbWO15 is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process. |
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| Keywords: | C. Dielectric properties C. Impedance C. Ferroelectric properties |
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