| 生长在In_xGa_（1－x）As（001）衬底上应变薄层GaAs的电子能带结构 |
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| 引用本文： | 徐至中,张勃. 生长在In_xGa_（1－x）As（001）衬底上应变薄层GaAs的电子能带结构[J]. 固体电子学研究与进展, 1996, 0(4) |
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| 作者姓名： | 徐至中 张勃 |
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| 作者单位： | 复旦大学物理系 |
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| 摘 要： | 采用经验的紧束缚方法对生长在ＩｎｘＧａ１－ｘＡｓ（００１）衬底上的应变薄层ＧａＡｓ的电子能带结构进行了计算。应变对能带结构的影响按标度定则进行计算，其中标度指数根据对畸变势常数的实验值进行拟合而确定。给出了ＧａＡｓ／ＩｎｘＧａ１－ｘＡｓ（００１）能带结构随衬底合金组分ｘ的变化关系，讨论了应变对能带色散关系的影响。
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| 关 键 词： | 紧束缚方法，畸变势常数，电子能带结构，应变薄层 |
Electronic Band Structures of Coherently Strained Layer GaAs on InxGa1-xAs (001) Substrates |
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| Xu Zhizhong, Zhang Bo. Electronic Band Structures of Coherently Strained Layer GaAs on InxGa1-xAs (001) Substrates[J]. Research & Progress of Solid State Electronics, 1996, 0(4) |
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| Authors: | Xu Zhizhong Zhang Bo |
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| Abstract: | Electronic band structures of coherently strained layer GaAs grown on In.Ga, InxGa1-x As (001) substrates are calculated with an empirical tight-binding method. The empirical scaling rule has been used for considering the effects of the strains on the energy band structures, in which the-scaling index is determined through fitting the deformation potentials with thier experimental values. The energy gaps and the valence band structures of GaAs/InxGa1-xAs (001) as a function of the alloy composition x are given and the effects of the strains on the energy band dispersions are discussed. |
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| Keywords: | Tight-binding Method Deformation Potential Electronic BandStructure Strained Layer |
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