|
|||||
|
|
Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation |
|
| Authors: | Ya. I. Alivov D. C. Look B. M. Ataev M. V. Chukichev V. V. Mamedov V. I. Zinenko Yu. A. Agafonov A. N. Pustovit |
| Affiliation: | a Physics Department, Institute of Microelectronics Technology, RAS, Shkolny Bulvar 1B15, Chernogolovka, Moscow 142432, Russia b Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA c Institute of Physics, Daghestan Scientific Centre of RAS, Makhachkala 367003, Russia d Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia |
| Abstract: | A ZnO-based metal–insulator–semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I–V dependences show a good rectifying diode-like behavior with a low leakage current of 10−6 A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. |
| Keywords: | Zinc oxide Implantation Metal–insulator–semiconductor diodes Electroluminescence |
| 本文献已被 ScienceDirect 等数据库收录！ | |