GaSb-based tapered diode lasers at 1.93 /spl mu/m with 1.5-W nearly diffraction-limited power |
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| Authors: | C. Pfahler G. Kaufel M.T. Kelemen M. Mikulla M. Rattunde J. Schmitz J. Wagner |
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| Affiliation: | Fraunhofer-Inst. fuer Angewandte Festkoerperphys., Freiburg, Germany; |
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| Abstract: | High-power high-brightness 1.93-/spl mu/m wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43/spl deg/ full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm/sup 2/sr. |
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