| PECVD法淀积氮化硼薄膜场发射特性研究 |
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| 引用本文： | 于丽娟,邓宁,李俊峰.PECVD法淀积氮化硼薄膜场发射特性研究[J].真空科学与技术学报,1999,19(4). |
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| 作者姓名： | 于丽娟 邓宁 李俊峰 |
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| 作者单位： | 西安交通大学电信学院电子工程系!西安710049 |
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| 基金项目： | 国家自然科学基金，国家教委博士点基金 |
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| 摘 要： | 用 Ｂ２Ｈ６和 ＳｉＨ４作反应气体，通过射频等离子体增强化学气相淀积（ＲＦ－ＰＥＣＶＤ）方法，在 Ｓｉ（１００）面上沉积生长ＢＮ薄膜，用Ｓ－５２０扫描电子显微镜对所得薄膜进行观测，并用红外透射光谱测试分析了膜的成分。在室温、压力为 ８ × １０－４ Ｐａ条件下，对 ＢＮ薄膜的电流一电压特性进行测量，并得到了 Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ特性曲线，ＢＮ膜的场发射开启电场为９ Ｖ／μｍ，在电场３７．５ Ｖ／μｍ时，电流密度达到２４．８ ｍＡ／ｃｍ２。
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| 关 键 词： | 射频等离子体增强化学气相沉积 氮化硼薄膜 场发射 |
Electron Emission Characteristics of BN Films Synthesized by PECVD |
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| Yu Lijuan,Deng Ning,Li Junfeng,Zhu Changchun.Electron Emission Characteristics of BN Films Synthesized by PECVD[J].JOurnal of Vacuum Science and Technology,1999,19(4). |
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| Authors: | Yu Lijuan Deng Ning Li Junfeng Zhu Changchun |
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| Abstract: | BN films were grown on Si(100) substrates by radio-frequency plasma enhanced physical vapor deposition with B2H6, N2 and SiH4 as source gases. The films were studied with scanning electron spectroscopy and Fourier transform infrared spectroscopy. The field emission current-voltage characteristics of the film were measured and the threshold voltage was found to agree well with that reported by Takashi Sugino. |
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| Keywords: | RF-PECVD BN films Field emission |
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