Effect of electric charge accumulation on low energy ion implantation in insulators

Charge accumulation at the surface of insulators during low energy ion implantation is related to two processes: ion impinging on the sample and secondary electron emission. Samples composed of a piece of Si (having the size of the ion beam) fixed on the centre of polyethylene (PE) coupons have been implanted with 2.2 keV H₂ ions to a fluence of 2 × 10¹⁶ H/cm². ERD (Elastic Recoil Detection) depth profiles of the implanted ions are shallower with an increase of the PE coupon size. The relative critical Si/PE size to repel all the incident ions is around 1.1 × 1.1 cm²/2.5 × 2.5 cm². The potential of the secondary electron suppressor has been varied from ?500 V to +500 V. It changes the secondary electron distribution around the implanted area and, consequently, affects the accumulation of charges at the sample surface. When the potential is 0 V, a uniform ion implantation with little effect of charge accumulation for all sizes of PE coupons is obtained. A two-dimension model has been performed and gives a good explanation for the mechanism of the electric charge neutralisation.