A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement |
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| Authors: | Chen Wensuo Zhang Bo Fang Jian Li Zhaoji |
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| Affiliation: | University of Electronic science and Technology of China,University of Electronic science and Technology of China,University of Electronic science and Technology of China,University of Electronic science and Technology of China |
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| Abstract: | New Lateral Insulated-Gate Bipolar Transistor with a Controlled Anode (CA-LIGBT) on Silicon-On-Insulator (SOI) substrate is reported. Benefiting by both of enhanced conductivity modulation effect and high resistance controlled electron extracting path, CA-LIGBT has faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT we presented earlier. As simulation results shown, the ratios of Figure of Merit (FOM) for CA-LIGBT comparing to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45:1 and 59.53:1, respectively. And, the new devices can be created by using an additional Silicon Direct Bonding (SDB). So, from power efficient point of view, the proposed CA-LIGBT is a promised device used in power IC's. |
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| Keywords: | controlled anode turn-off time forward drop power IC |
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