0.1 - 110 GHz在片去嵌技术

研究了0.1 - 110 GHz S参数在片去嵌技术，给出了输入、输出端口非对称下的直通-反射-传输线（TRL）和传输线-反射-匹配（LRM）的去嵌算法求解结果。在 InP衬底上设计了TRL和LRM去嵌标准件，采用两种无源元件验证了去嵌结果的正确性，并且对TRL和LRM在0.1-110 GHz范围内的去嵌准确性进行对比。通过在0.1 - 40 GHz运用 LRM方法，和在75 - 110 GHz运用TRL方法，获得了有源器件HBT两频带内的本征S参数，并对去嵌前和去嵌后提取的小信号电流增益及单向功率增益进行对比。通过插值，可得出待测件0.1 - 110 GHz完整的S参数。

On-wafer de-embedding techniques from 0.1 to 110 GHz

On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving results of thru-reflect-line (TRL) and line-reflect-match (LRM) de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1-40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.