808nm DFB半导体激光器的光栅制备

实验优化设计了808nm DFB半导体激光器的二级布拉格光栅结构，介绍了808 nm分布反馈（DFB）半导体激光器光栅制备的工艺过程。采用全息光刻方法和湿法腐蚀技术在GaAs衬底片上制备了周期为240nm的光栅图形，全息光刻系统采用条纹锁定技术降低条纹抖动和提高干涉稳定性，腐蚀液采用H3PO4 : H2O2 : H2O (1 : 1 : 10)，腐蚀时间为30s。光学显微镜、扫描电子显微镜（SEM）和原子力显微镜（AFM）测试显示，光栅周期为240nm，占空比为0.25，深度为80nm，具有完美的表面形貌，及良好的连续性和均匀性。

Preparation for Bragg grating of 808 nm distributed feedback laser diode

The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.