| 绝缘栅双极晶体管的设计要点 |
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| 引用本文： | 张景超,赵善麒,刘利峰,王晓宝. 绝缘栅双极晶体管的设计要点[J]. 电力电子技术, 2010, 44(1) |
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| 作者姓名： | 张景超 赵善麒 刘利峰 王晓宝 |
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| 作者单位： | 江苏宏微科技有限公司,江苏,常州,213022;江苏宏微科技有限公司,江苏,常州,213022;江苏宏微科技有限公司,江苏,常州,213022;江苏宏微科技有限公司,江苏,常州,213022 |
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| 摘 要： | 介绍了绝缘栅双极晶体管(IGBT)的基本结构和工作原理;讨论了IGBT各关键参数和结构设计中需要考虑的主要问题;分析了IGBT设计中需要协调的几对矛盾参数的关系以及影响IGBT可靠性的关键因素。
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| 关 键 词： | 绝缘栅双极晶体管 关键参数 结构设计 可靠性 |
The Key Design Points of Insulated Gate Bipolar Transistor |
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| ZHANG Jing-chao,ZHAO Shan-qi,LIU Li-feng,WANG Xiao-bao. The Key Design Points of Insulated Gate Bipolar Transistor[J]. Power Electronics, 2010, 44(1) |
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| Authors: | ZHANG Jing-chao ZHAO Shan-qi LIU Li-feng WANG Xiao-bao |
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| Affiliation: | MacMic Science & Technology Co.;Ltd.;Changzhou 213022;China |
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| Abstract: | The basic structure and operation mechanism of insulated gate bipolar transistor(IGBT)are introduced.The key electrical characteristics are discussed,as well as the key factors which should be considered when designing an IGBT.The trade-offs between different characters of an IGBT and the influences on its reliability are also analyzed. |
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| Keywords: | insulated gate bipolar transistor key characteristics structure design reliability |
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