Irradiation effects in semiconductor

Samples of crystalline silicon, porous silicon, gallium arsenide and silicon diodes were exposed to 50–80 MeV silicon and oxygen ions in the fluence range of the order of 10¹³ to 10¹⁴ ions/cm². The irradiated samples were characterized to obtain information on the relative concentration and depth distribution of the induced defects. For comparison a few silicon diodes and crystalline silicon samples were also exposed to 6 MeV electrons. The main techniques used for the analysis of silicon samples were low angle X-ray diffraction, photo-luminescence spectroscopy and lifetime of minority carriers, whereas diodes were characterized on the basis of switching parameters. It is observed that a large number of defects are produced in the surface region of each of the irradiated semiconductor sample though the energy deposited in the surface region through electronic loss is three orders of magnitude greater than that of nuclear collisions.