Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region |
| |
Authors: | V. P. Evtikhiev I. V. Kudryashov E. Yu. Kotel’nikov V. E. Tokranov A. N. Titkov I. S. Tarasov Zh. I. Alferov |
| |
Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
| |
Abstract: | The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm2. Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998) |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |