Unstrained, modulation-doped, In0.3Ga0.7As/In0.29Al0.71As field-effect transistor grown on GaAssubstrate |
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| Authors: | Tien N.C. Chen J. Fernandez J.M. Wieder H.H. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA; |
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| Abstract: | The fabrication, structure, and properties of unstrained modulation-doped, 1-μm-long and 10-μm-wide gate, field effect transistors made of In0.3Ga0.7As/In0.29As0.71As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS/mm, fmax of 56 GHz, and a gate breakdown voltage of 23.5 V |
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