Investigation of techniques for minimizing resistivity of thin metallic films at submillimeter wavelengths

Experimental investigations of the substrate deposition temperature and annealing temperature influence on aluminum films deposited on diamond substrates were conducted. Tests were performed at direct current and at 101.55 GHz. Minimum resistivity levels, near theoretical predictions, occurred for deposition temperatures in the range of 50–160°C and for peak annealing temperatures of 100–120°C. Both colder and hotter substrate temperatures resulted in larger resistivity levels.