Photoelectric properties of n-CdS/p-InP heterojunctions

The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P _I ∼Θ²). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices. Fiz. Tekh. Poluprovodn. 32, 72–77 (January 1998)