ZnO transparent thin-film transistors with HfO/sub 2//Ta/sub 2/O/sub 5/ stacking gate dielectrics |
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| Authors: | Chen H.J.H. Yeh B.B.L. Pan H.-C. Chen J.-S. |
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| Affiliation: | Nat. Chi Nan Univ., Nantou; |
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| Abstract: | The performance improvement of ZnO thin-film transistors (TFTs) using HfO2/Ta2O5 stacked gate dielectrics was demonstrated. The ZnO TFTs exhibited transistor behaviour over the range 0-10 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2 V-1 s-1, 0.5 V/decade and ~106, respectively. |
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