| ITO薄膜厚度和含氧量对其结构与性能的影响 |
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| 引用本文： | 辛荣生,林钰.ITO薄膜厚度和含氧量对其结构与性能的影响[J].电子元件与材料,2007,26(7):21-23. |
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| 作者姓名： | 辛荣生 林钰 |
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| 作者单位： | 1. 郑州大学,材料科学与工程学院,河南,郑州,450052
2. 河南教育学院,化学系,河南,郑州,450014 |
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| 摘 要： | 在玻璃衬底上用直流磁控溅射的方法镀制ITO透明半导体膜,采用X射线衍射技术分析了膜层晶体结构与薄膜厚度和氧含量的关系,并测量了薄膜电阻率及透光率分别随膜厚和氧含量的变化情况。以低氧氩流量比(1/40)并控制膜厚在70nm以上进行镀膜,获得了结晶性好、电阻率低且透光率高的ITO透明半导体薄膜,所镀制的ITO膜电阻率降到1.8×10–4?·cm,可见光透光率达80%以上。
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| 关 键 词： | 无机非金属材料 ITO膜 氧氩流量比 电阻率 透光率 |
| 文章编号： | 1001-2028（2007）07-0021-03 |
| 修稿时间： | 2007-04-09 |
Influence of thickness and oxygen content of ITO thin films on its structure and properties |
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| XIN Rong-sheng,LIN Yu.Influence of thickness and oxygen content of ITO thin films on its structure and properties[J].Electronic Components & Materials,2007,26(7):21-23. |
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| Authors: | XIN Rong-sheng LIN Yu |
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| Abstract: | ITO transparent semiconducting films were deposited onto the glass substrates by DC magnetron sputtering method. The film structure related to film thickness and oxygen content was determined by X-ray diffraction. The resistivity and transmissivity changed with film thickness and oxygen content individually were also measured. The ITO transparent semiconducting films with well crystallinity, low resistivity and high transmissivity were obtained, which deposited by processing of low flow ratio O2/Ar(1/40) and film thickness above 70 nm. The ITO film resistivity is 1.8×10–4 ?·cm and visible light transmissivity is beyond 80 %. |
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| Keywords: | non-metallic inorganic material ITO film ratio O2/Ar resistivity transmissivity |
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