| PECVD法制备氮化硅薄膜的研究进展 |
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| 引用本文： | 王育梅,吴孟强,张树人. PECVD法制备氮化硅薄膜的研究进展[J]. 材料导报, 2008, 3(1): 36-39 |
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| 作者姓名： | 王育梅 吴孟强 张树人 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 |
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| 摘 要： | 等离子增强型化学气相沉积（PEDVD）是目前较为理想和重要的氮化硅薄膜制备方法。着重介绍了PECVD法制备氮化硅薄膜工艺参数的研究进展。
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| 关 键 词： | 氮化硅薄膜 PECVD 工艺参数 |
Research Progress in Preparation of Si3N4 Thin Films by PECVD |
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| WANG Yumei,WU Mengqiang,ZHANG Shuren. Research Progress in Preparation of Si3N4 Thin Films by PECVD[J]. Materials Review, 2008, 3(1): 36-39 |
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| Authors: | WANG Yumei WU Mengqiang ZHANG Shuren |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054) |
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| Abstract: | Plasma-enhanced chemical vapor deposition （PECVD） is one of more perfect and important methods to prepare Si3N4 thin films. This paper introduces the research progress in processing parameters of the preparation of Si3N4 thin films by PECVD. |
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| Keywords: | Si3N4 thin films PECVD processing parameters |
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