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掺杂BaF2晶体闪烁性能的研究
引用本文:龚晓辉.掺杂BaF2晶体闪烁性能的研究[J].光学精密工程,1992,0(2):31-33.
作者姓名:龚晓辉
摘    要:在 BaF2晶体中掺人 LaF3,CeF2,NaF 结晶出 BaF2(La),BaF2(Ce),BaF2(Na)晶体,经测试,其中 BaF2(La)晶体闪烁发光快成分的强度比纯 BaF2晶体不减弱,而发光慢成分被抑制3倍,耐辐照能力可以达106rad,表明新晶体有希望满足未来高能物理实验的要求。同时我们对 BaF2晶体自身的损伤机制和闪烁机制进行了深入研究。


Investigation of the Scintillation Properties of Doped BaF2 Crystal
Gong Xiaohui.Investigation of the Scintillation Properties of Doped BaF2 Crystal[J].Optics and Precision Engineering,1992,0(2):31-33.
Authors:Gong Xiaohui
Abstract:Doped BaF2 crystals have been grown with LaF3,CeF2,NaF doped in BaF2 and the scintillation properties of the new crystal have been investigated before and after a r irradiation of 60Co source.The radiation resistance of the doped crystal can be up to a dose of 106 rad.Comparing with a pure BaF2 scintillator,it was found that the fast component of the BaF2(La)scintillator was almost no change but its slow component was suppressed to a factor of 3.Furthermore,the scintillation mechanisms and damage mechanisms in BaF2 are discussed.
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