Nano-indentation studies of xerogel and SiLK low-K dielectric materials |
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Authors: | A K Sikder I M Irfan Ashok Kumar J M Anthony |
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Affiliation: | (1) Center for Microelectronics Research, College of Engineering, University of South Florida, 33620 Tampa, FL |
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Abstract: | Low-K dielectric films have reduced hardness and modulus relative to traditional dielectric materials. There are many potential
challenges associated with these materials to integrate with integrated circuit (IC) technologies. It is important to evaluate
the mechanical properties of low-K materials along with their electrical characterization to implement them in sub—0.25μm
devices. In this investigation, we have discussed the mechanical properties of low-K dielectric materials and evaluated the
mechanical behavior of SiLK and Xerogel samples using nano-indentation studies. Surface behavior after indentation is also
investigated with high resolution scanning electron microscopy. Nano-indentation using the continuous stiffness measurement
technique is shown to be reliable for evaluating the mechanical properties of thin and low modulus films. |
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Keywords: | Nano-indentation low-K material hardness modulus continuous stiffness measurement (CSM) |
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