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Effect of annealing on SiC thin films prepared by pulsed laser deposition |
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| Authors: | Jipo Huang, Lianwei Wang, Jun Wen, Yuxia Wang, Chenglu Lin,Mikael stling |
| Affiliation: | a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China b Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China c Royal Institute of Technology, Department of Electronics, Electrum 299, SE-16440 Kista-Stockholm, Sweden |
| Abstract: | Crystalline cubic SiC thin films were successfully fabricated on Si(100) substrates by using laser deposition combined with a vacuum annealing process. The effect of annealing conditions on the structure of the thin films was investigated by X-ray diffraction and Fourier transform infrared spectroscopy. It was demonstrated that amorphous SiC films deposited at 800°C could be transformed into crystalline phase after being annealed in a vacuum and that the annealing temperature played an important role in this transformation, with an optimum annealing temperature of 980°C. Results of X-ray photoelectron spectroscopy revealed the approximate stoichiometry of the SiC films. The characteristic microstructure displayed in a scanning electron microscope image of the films was indicative of epitaxial growth along the (100) plane. |
| Keywords: | Annealing Pulsed laser deposition SiC thin films |
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