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扫描隧道显微镜钨针尖氧化层去除的化学方法
引用本文:余昶,王晖. 扫描隧道显微镜钨针尖氧化层去除的化学方法[J]. 真空电子技术, 2004, 0(2): 31-33
作者姓名:余昶  王晖
作者单位:上海交通大学,微纳米科学与技术研究院,上海,200030
摘    要:电化学腐蚀得到的扫描隧道显微镜(STM)钨针尖表面通常覆盖了一层钨的氧化膜,这层氧化膜的存在很大程度上影响了STM扫描图像质量.本实验采用氢氟酸对新制备出的钨针尖进行去氧化层处理,并通过对比两组高序热解石墨(HOPG)STM图像和金样品的扫描隧道谱来论证这种去氧化层手段的有效性.

关 键 词:扫描隧道显微镜  电化学腐蚀  钨针尖  氧化层
文章编号:1002-8935(2004)02-0031-03
修稿时间:2003-07-28

A Chemical Method for Removing the Oxide Layer of STM Tungsten Tips
YU Chang,WANG Hui. A Chemical Method for Removing the Oxide Layer of STM Tungsten Tips[J]. Vacuum Electronics, 2004, 0(2): 31-33
Authors:YU Chang  WANG Hui
Abstract:Tungsten STM tips made by electrochemical etching are always covered with a layer of oxide film, which greatly affects the quality of STM images. In the experiment, this oxide layer of newly made tungsten tip was removed by hydrofluoric acid. Two sets of STM images of HOPG and scanning tunneling spectroscopy of gold sample were compared to confirm the validity of the method.
Keywords:Scanning tunneling microscope  Electrochemical etching  Tungsten tip  Oxide layer  
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