Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser

The temperature characteristics for the different lasing modes at 300 K of intracavity contacted InGaAs/GaAs Vertical Cavity Surface Emitting Lasers (VCSELs) have been investigated experimentally by using the SV-32 cryostat and LD2002C5 test system. In combination with the simulation results of the reflective spectrum and the gain peak at different temperatures, the measurement results have been analyzed. In addition, the dependence of device size on temperature characteristics is discussed. The experimental data can be used to optimally design of VCSEL at high or cryogenic temperature. Supported by National Natural Science Foundation of China (No. 60276033), National High Technology Research and Development Program of China (No. 2002AA312070), National Key Basic Research Plan of China (No. G20000683-02), and Beijing Natural Science Foundation of China (No. 4021001).