Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition |
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| Affiliation: | 1. Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641 Cluj-Napoca, Romania;2. Institut Néel, CNRS/Université Grenoble Alpes, BP166, 38042 Grenoble, Cédex 9, France;3. CNRS, Institut NEEL, 25 rue des martyrs, BP166, F-38042 Grenoble, France;4. Superconductivity, Spintronics and Surface Science Center – C4S, Technical University of Cluj-Napoca, 28 Memorandumului Street, Cluj-Napoca, Romania;1. College of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, People?s Republic of China;2. Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, People?s Republic of China;1. Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, 80-233 Gdansk, Poland;2. Los Alamos National Laboratory, Los Alamos, NM 87545, USA;3. Department of Chemistry, Princeton University, Princeton, NJ 08544, USA;1. Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany;2. Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany;3. Faculty of Physical Sciences, National University of San Marcos, P.O. Box 14-0149, Lima 14, Peru |
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| Abstract: | Highly c-axis oriented LiNbO3 thin films have been deposited on Si (111) substrates by pulsed laser deposition. A stoichiometric sintered LiNbO3 is used as the target. The c-axis orientation and stoichiometry of LiNbO3 films are strongly influenced by substrate temperature and oxygen pressure. The substrate temperature 600 °C and oxygen pressure 20–30 Pa are found to be optimized parameters for the growth of textured film. The results showed that the size and the density of droplets decreased with increasing substrate temperature, and droplets would disappear when substrate temperature is increased above 600 °C. The surface microstructures of LiNbO3 films under optimized conditions are fine, uniform and dense. The AFM images ensured that the as-grown films are good enough to be integrated with the semiconductor devices. |
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