Giant-grain silicon (GGS) and its application to stable thin-film transistor |
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| Affiliation: | 1. Next Generation Fuel Division, Korea Atomic Energy Research Institute, Yuseong-gu, Daejeon, Republic of Korea;2. Department of Material Science and Engineering, Korea Advanced Institute Science and Technology, Yuseong-gu, Daejeon 305-701, Republic of Korea;3. Department of Nuclear and Quantum Engineering, Korea Advanced Institute Science and Technology, Yuseong-gu, Daejeon 305-701, Republic of Korea;1. Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany;2. Experimental Physics I, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany |
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| Abstract: | We developed a giant-grain silicon (GGS) by Ni-mediated crystallization of amorphous silicon (a-Si) with a silicon-nitride (SiNx) cap layer. Ni particles were sputtered onto the SiNx/a-Si layer and then it was annealed at around 600 °C. The Ni diffuses through a SiNx cap and then forms NiSi2 crystallites in a-Si, which is able to induce crystallization. The grain size can be controlled from a few to 100 μm. The grain size can be increased with increasing the cap layer thickness or by decreasing the Ni density on the SiNx. The p-channel GGS poly-Si TFT exhibited a field-effect mobility of 101 cm2/Vs and a threshold voltage of −3.6 V and is very stable under gate or hot carrier bias-stress. These superior performances may be due to the smooth surface of GGS poly-Si and solid-phase crystallization of a-Si. |
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